m mbt3904lt1 2 emitter 3 collector 1 base sot?23 maximum ratings rating symbol v alue unit collector?emitter voltage v ceo 40 vdc collector?base voltage v cbo 60 vdc emitter?base voltage v ebo 6.0 vdc collector current ? continuous i c 200 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w operating junction and storage t emperature t j ,t stg ?55 to +150 c device marking m mbt3904lt1 = 1am electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage(3) v (br)ceo 40 ? vdc (i c = 1.0 madc) collector?base breakdown voltage v (br)cbo 60 ? vdc (i c = 10 adc) emitter?base breakdown voltage v (br)ebo 6.0 ? vdc (i e = 10 adc) base cutoff current i bl ? 50 nadc ( v ce = 30 vdc, v eb = 3.0 vdc, ) collector cutoff current i cex ? 50 nadc ( v ce = 30vdc, v be = 3.0vdc ) 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. ? device marking shipping m mbt3904lt1 1am 3000/tape & reel general purpose transistor ordering information rohs product for packing code suffix "g", weight : 0.008g halogen free product for packing code suffix "h" . ?
m mbt3904lt1 electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (3) dc current gain(1) h fe ?? (i c =0.1 madc, v ce =1.0 vdc) 40 ?? (i c = 1.0 madc, v ce = 1.0 vdc) 70 ?? (i c = 10 madc, v ce = 1.0 vdc) 100 300 (i c = 50madc, v ce = 1.0vdc) 60 ?? (i c = 100madc, v ce =1.0 vdc) 30 ?? collector?emitter saturation voltage v ce(sat) vdc (i c = 10 madc, i b = 1.0 madc)(3) ?? 0.2 (i c = 50 madc, i b = 5.0madc) ?? 0.3 base?emitter saturation voltage(3) v be(sat) vdc (i c = 10 madc, i b = 1.0madc) 0.65 0.85 (i c = 50madc, i b = 5.0madc ) ?? 0.95 small?signal characteristics current?gain ? bandwidth product f t 300 ? ? mh z (i c = 10madc, v ce = 20vdc, f = 100mhz) output capacitance (v cb = 5.0vdc, i e = 0, f = 1.0 mhz) c obo ?? 4.0 pf input capacitance c ibo ?? 8.0 pf (v be = 0.5vdc, i c = 0, f = 1.0 mhz) input impedancen h ie 1.0 10 (v ce = 10vdc, i c = 1.0madc, f = 1.0 khz) voltage feedback ratio h re 0.5 8.0 x10 ?4 (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) small?signal current gain h fe 100 400 ? (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) output admittance h oe 1.0 40 (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) noise figure nf ? 5.0 db (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k ? , f = 1.0 khz) switching characteristics delay time (v cc = 3.0 vdc,v be = ?0.5vdc t d ?35 ns rise time i c = 10 madc, i b1 = 1.0madc) t r ?35 storage time (v cc = 3.0vdc, t s ? 200 fall time i c = 10 madc,i b1 = i b2 = 1 . 0 madc) t f ?5 0 ns 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. k mhos
m mbt3904lt1 figure 1. delay and rise time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns ?0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns ?9.1 +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors figure 2. storage and fall time equivalent test circuit typical transient characteristics reverse bias voltage (volts) figure 3. capacitance i c , collector current (ma) figure 4. charge data q, charge (pc) capacitance (pf) v cc = 40 v i c /i b = 10 q t q a c ibo c obo t j = 25c t j = 125c 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 10 7.0 5.0 3.0 2.0 1.0 5000 3000 2000 1000 700 500 300 200 100 70 50
m mbt3904lt1 i c , collector current (ma) figure 5. turn?on time i c , collector current (ma) figure 6. rise time i c , collector current (ma) figure 7. storage time i c , collector current (ma) figure 8. fall time typical audio small?signal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25c, bandwidth = 1.0 hz) t r , rise time (ns) t f , , fall time (ns) v cc = 40 v i c /i b = 10 f, frequency (khz) figure 9. nf, noise figure (db) f = 1.0 khz v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b =10 i c /i b =20 i c /i b =10 i c /i b =20 t ? s = t s ?1 /8 t f i b1 = i b2 i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance=200 ? i c = 1.0 ma source resistance =200 ? i c = 0.5 ma source resistance=500 ? i c = 100 a source resistance =1.0k i c = 50 a r s , source resistance (k ? ) figure 10. 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 time (ns) t ? s , storage time (ns) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 12 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 14 12 10 8 6 4 2 0 nf, noise figure (db)
h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25c) v ce = 1.0 v m mbt3904lt1 typical static characteristics i c , collector current (ma) figure 11. current gain i c , collector current (ma) figure 12. output admittance i c , collector current (ma) figure 13. input impedance i c , collector current (ma) figure 14. voltage feedback ratio i c , collector current (ma) figure 15. dc current gain h fe , current h ie , input impedance (k ? ) h fe , dc current gain (normalized) t j = +125c +25c ?55c 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 100 50 20 10 5 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 2.0 1.0 0.7 0.5 0.3 0.2 0.1 h , output admittance ( mhos) oe h , voltage feedback ratio (x 10 ) re ?4
m mbt3904lt1 i b , base current (ma) figure 16. collector saturation region i c , collector current (ma) figure 17. ?on? voltages i c , collector current (ma) figure 18. temperature coefficients v ce , collector emitter voltage (volts) v, voltage (volts) coefficient(mv/c) 1.0 2.0 3.0 5.0 10 20 50 100 200 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 0.8 0.6 0.4 0.2 0 i c = 1.0 ma t j = 25c 10 ma 30 ma 100 ma t j = 25c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v +25c to +125c ?55c to +25c +25c to +125c ?55c to +25c vc for v ce(sat) vb for v be(sat) 0 20 40 60 80 100 120 140 160 180 200 1.0 0.5 0 ?0.5 ?1.0 ?1.5 ?2.0
d j k l a c b s h g v 12 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 pin 1. base 2. emitter 3. collector 0.031 0.8 sot-23 3 m mbt3904lt1
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